to- 9 2 plastic-encapsulate mosfets cj v 01n60 n-channel power mosfet general description the high voltage mosfet uses an advanced termination scheme to provide enhanced voltage-blocki ng capability without degrading performance over time. in addition , this advanced mosfet is designed to withstand high energy in avalanche and commutation modes . the new energy efficient design also offe rs a drain-to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power suppliers, c onverters and pwm motor controls , these devices are pa rticularly well suited for bridge circuits where diode speed and commutating safe operati ng areas are critical and offer additional and safety margin against unexpected voltage transients. features z robust high voltage termination z avalanche energy specified z source-to-drain diode recovery time compar able to a discrete fast recovery diode z diode is characterized fo r use in bridge circuits z i dss and v ds(on) specified at elevated temperature maximum ratings (t a =25 unless otherwise noted) paramete r s y mbol v alue unit drain-source v oltage v ds 600 gate-source voltage v gs 30 v continuous drain current i d 1 pulsed drain current i dm 9 a power dissipation p d 0 . 6 25 w single pulsed avalanche energy* e as 20 mj thermal resistance from junction to ambient r thja 2 00 /w junction temperature t j 150 storage temperature t stg -50 ~+150 *e as condition: t j =25 ,v dd =100v,v g s =10v,l=10mh,i as =2a,r g =25 ? to- 9 2 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 600 gate-threshold voltage (note1) v gs(th) v ds =v gs , i d =250a 2.0 4.0 v gate-body leakage current (note1) i gss v ds =0v, v gs =20v 100 na zero gate voltage drain current i dss v ds =600v, v gs =0v 0.10 a drain-source on-state resistance (note1) r ds(on) v gs =10v, i d =0.6a 10 ? forward transconductance (note1) g fs v ds =50v, i d =0.5a 0.5 s input capacitance c iss 210 output capacitance c oss 28 reverse transfer capacitance c rss v ds =25v,v gs =0v, f =1mhz 4.2 pf turn-on delay time t d (on) 8 rise time t r 21 turn-off delay time t d(off) 18 fall time t f v dd =300v, i d =1a, v gs =10v,r g =18 ? 24 ns forward on voltage(note1) v sd v gs =0v, i s =1a 1.5 v notes: 1. pulse test : pulse width 300s, duty cycle 2 %. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0 5 10 15 20 25 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0123456 0.00 0.25 0.50 0.75 1.00 1.25 024681 0 0 10 20 30 40 50 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 9 t a =25 pulsed v gs =12v,10v,8v,6v,5.5v v gs =5v v gs =4.5v v gs =4v drain current i d (a) drain to source voltage v ds (v) output characteristics t a =100 t a =25 v ds =50v pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) v gs r ds(on) ?? on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =25 pulsed i d =0.6a t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) v gs =10v ?? i d r ds(on) CJV01N60 t a =25 pulsed v sd i s ?? source current i s (a) source to drain voltage v sd (v) 25 50 75 100 125 1.8 2.0 2.2 2.4 2.6 2.8 3.0 i d =250ua threshold voltage ambient temperature t a ( ) threshold voltage v th (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c , nov, 2012
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